tpsma6.8 thru tpsma43a vishay general semiconductor document number: 88405 revision: 09-feb-11 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 1 surface mount par ? transient voltage suppressors high temperature st ability and high relia bility conditions typical applications use in sensitive electronics protection against voltage transients induced by indu ctive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. features ? junction passivation optimized design passivated anisotropic rectifier technology ?t j = 185 c capability suitable for high reliability and automo tive requirement ? available in uni-directional polarity only ? 400 w peak pulse power capability with a 10/1000 s waveform, repet itive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: do-214ac (sma) molding compound meets ul 94 v-0 flammability rating base p/nhe3 - rohs comp liant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on p.c.b. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads attached to each terminal (3) measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum (4) mounted on minimum recommended pad layout primary characteristics v br 6.8 v to 43 v p ppm 400 w p d 1.0 w i fsm 40 a t j max. 185 c do-214ac (sma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak power dissipation with a 10/1000 s waveform (1)(2) (fig. 3) p ppm 400 w peak power pulse current with a 10/1000 s waveform (1) (fig. 1) i ppm see next table a power dissipation at t a = 25 c (4) p d 1.0 w peak forward surge current 8.3 ms single half sine-wave (3) i fsm 40 a maximum instantaneous forward voltage at 25 a (3) v f 3.5 v operating junction and storage temperature range t j , t stg - 65 to + 185 c
tpsma6.8 thru tpsma43a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 88405 revision: 09-feb-11 2 notes (1) v br measured after i t applied for 300 s, i t = square wave pulse or equivalent (2) surge current waveform per fig. 3 and derated per fig. 2 (3) all terms and symbols are consis tent with ansi/ieee c62.35 electrical characteristics (t a = 25 c unless otherwise noted) device device marking code breakdown voltage v br (1) at i t (v) test current i t (ma) stand- off voltage v wm (v) maximum reverse leakage at v wm i r (a) t j = 150 c maximum reverse leakage at v wm i d (a) maximum peak pulse surge current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) min. max. tpsma6.8 adp 6.12 7.48 10 5.50 300 1000 37.0 10.8 tpsma6.8a aep 6.45 7.14 10 5.80 300 1000 38.1 10.5 tpsma7.5 afp 6.75 8.25 10 6.05 150 500 34.2 11.7 tpsma7.5a agp 7.13 7.88 10 6.40 150 500 35.4 11.3 tpsma8.2 ahp 7.38 9.02 10 6.63 50 200 32.0 12.5 tpsma8.2a akp 7.79 8.61 10 7.02 50 200 33.1 12.1 tpsma9.1 alp 8.19 10.00 1.0 7.37 10 50 29.0 13.8 tpsma9.1a amp 8.65 9.55 1.0 7.78 10 50 29.9 13.0 tpsma10 anp 9.00 11.00 1.0 8.10 5.0 20 26.7 15.0 tpsma10a app 9.50 10.50 1.0 8.65 5.0 20 27.6 14.5 tpsma11 aqp 9.90 12.10 1.0 8.92 1.0 5.0 24.7 16.2 tpsma11a arp 10.50 11.60 1.0 9.40 1.0 5.0 25.6 15.6 tpsma12 asp 10.80 13.20 1.0 9.72 1.0 5.0 23.1 17.3 tpsma12a atp 11.40 12.60 1.0 10.20 1.0 5.0 24.0 16.7 tpsma13 aup 11.70 14.30 1.0 10.50 1.0 5.0 21.1 19.0 tpsma13a avp 12.40 13.70 1.0 11.10 1.0 5.0 22.0 18.2 tpsma15 awp 13.50 16.30 1.0 12.10 1.0 5.0 18.2 22.0 tpsma15a axp 14.30 15.80 1.0 12.80 1.0 5.0 18.9 21.2 tpsma16 ayp 14.40 17.60 1.0 12.90 1.0 5.0 17.0 23.5 tpsma16a azp 15.20 16.80 1.0 13.60 1.0 5.0 17.8 22.0 tpsma18 bdp 16.20 19.80 1.0 14.50 1.0 5.0 15.1 26.5 tpsma18a bep 17.10 18.90 1.0 15.30 1.0 5.0 15.9 25.5 tpsma20 bfp 18.00 22.00 1.0 16.20 1.0 5.0 13.7 29.1 tpsma20a bgp 19.00 21.00 1.0 17.10 1.0 5.0 14.4 27.7 tpsma22 bhp 19.80 24.20 1.0 17.80 1.0 5.0 12.5 31.9 tpsma22a bkp 20.90 23.10 1.0 18.80 1.0 5.0 13.1 30.6 tpsma24 blp 21.60 26.40 1.0 19.40 1.0 5.0 11.5 34.7 tpsma24a bmp 22.80 25.20 1.0 20.50 1.0 5.0 12.0 33.2 tpsma27 bnp 24.30 29.70 1.0 21.80 1.0 5.0 10.2 39.1 tpsma27a bpp 25.70 28.40 1.0 23.10 1.0 5.0 10.7 37.5 tpsma30 bqp 27.00 33.00 1.0 24.30 1.0 5.0 9.2 43.5 tpsma30a brp 28.50 31.50 1.0 25.60 1.0 5.0 9.7 41.4 tpsma33 bsp 29.70 36.30 1.0 26.80 1.0 5.0 8.4 47.0 tpsma33a btp 31.40 34.70 1.0 28.20 1.0 5.0 8.8 45.7 tpsma36 bup 32.40 39.60 1.0 29.10 1.0 5.0 7.7 52.0 tpsma36a bvp 34.20 37.80 1.0 30.80 1.0 5.0 8.0 49.9 tpsma39 bwp 35.10 42.90 1.0 31.60 1.0 5.0 7.1 56.4 TPSMA39A bxp 37.10 41.00 1.0 33.30 1.0 5.0 7.4 53.9 tpsma43 byp 38.70 47.30 1.0 34.80 1.0 5.0 6.5 61.9 tpsma43a bzp 40.90 45.20 1.0 36.80 1.0 5.0 6.7 59.3
tpsma6.8 thru tpsma43a vishay general semiconductor document number: 88405 revision: 09-feb-11 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 3 note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode tpsma6.8ahe3/61t (1) 0.064 61t 1800 7" diameter plastic tape and reel tpsma6.8ahe3/5at (1) 0.064 5at 7500 13" diameter plastic tape and reel figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature 0.1 1.0 10 100 0. 2x 0.2" (5. 0x 5.0 mm) copper pad areas p ppm - peak po w er (k w ) t d - p u lse w idth (s) n on-repetiti v e p u lse w a v eform sho w n in fig. 3 t a = 25 c 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms 0 50 100 100 75 50 25 0 150 200 t j - initial temperat u re (c) peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage, % figure 3. pulse waveform figure 4. typical junction capacitance td 0 50 100 150 t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 t d 10/1000 s w a v eform as defined b y r.e.a. 0 1.0 2.0 3.0 4.0 t - time (ms) i ppm - peak p u lse c u rrent, % i rsm t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 100 1000 10 000 1 10 100 j u nction capacitance (pf) v br - breakdo w n v oltage ( v ) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p v r meas u red at zero bias v r meas u red at stand-off, v w m
tpsma6.8 thru tpsma43a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 88405 revision: 09-feb-11 4 package outline dimensions in inches (millimeters) figure 5. maximum non-repetitive peak forward surge current 200 100 10 1 5 10 50 100 50 t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) mounting pad layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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